M 45 Mechanisms of hopping conductivity in weakly doped La1-xBaxMnO3 [Текст] / R. Laiho, K. G. Lisunov, E. Laehderanta, M. A. Shakhov, V. N. Stamov, V. S. Zakhvalinskii, V. L. Kozhevnikov, I. A. Leonidov, E. B. Mitberg, M. V. Patrakeev // Journal of Physics: Condensed Matter. - 2005. - Vol. 17, № 21. - С. 3429-3444. - Библиогр. : с. 3444 (35 назв.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Кл.слова (ненормированные): КЕРАМИКА -- МАНГАНИТЫ Аннотация: The resistivity, ρ, of ceramic La1−xBaxMnO3 with x = 0.02–0.10 corresponding to the concentrations of holes c ≈ 0.15–0.17 displays an activated behaviour both above and below the paramagnetic to ferromagnetic transition temperature TC = 175–209 K, obtained from measurements of the magnetization. Above T~ 310–390 K ρ(T, x) is determined by nearest-neighbour hopping of small polarons with activation energy Ea = 0.20–0.22 eV. Below the onset temperature Tv = 250–280 K, depending on x, a Shklovskii–Efros-like variable-range hopping conductivity mechanism, governed by a soft temperature independent Coulomb gap, The resistivity, ρ, of ceramic La1−xBaxMnO3 with x = 0.02–0.10 corresponding to the concentrations of holes c ≈ 0.15–0.17 displays an activated behaviour both above and below the paramagnetic to ferromagnetic transition temperature TC = 175–209 K, obtained from measurements of the magnetization. Above T ~ 310–390 K ρ(T, x) is determined by nearest-neighbour hopping of small polarons with activation energy Ea = 0.20–0.22 eV. Below the onset temperature Tv = 250–280 K, depending on x, a Shklovskii–Efros-like variable-range hopping conductivity mechanism, governed by a soft temperature independent Coulomb gap, ≈ 0.44–0.46 eV, and a rigid gap, δ(T ), is found. For the range T ~ 50–120K, δ(T ) is connected to the formation of small lattice polarons in conditions of strong electron– phonon interaction and lattice disorder. The rigid gap obeys a law δ(T ) ~ T 1/2 within two temperature intervals above and below TC, exhibits an inflection at TC and reaches at Tv a value of δv ≈ 0.14–0.18 eV. Such behaviour suggests a spin dependent contribution to δ(T ). The localization radius of the charge carriers, a, has different constant values within the temperature intervals where δ(T ) ~ T 1/2. With further decrease of T , a increases according to the law expected for small lattice polarons ≈ 0.44–0.46 eV, and a rigid gap, δ(T ), is found. For the range T ~ 50–120K, δ(T ) is connected to the formation of small lattice polarons in conditions of strong electron– phonon interaction and lattice disorder. The rigid gap obeys a law δ(T ) ~ T 1/2 within two temperature intervals above and below TC, exhibits an inflection at TC and reaches at Tv a value of δv ≈ 0.14–0.18 eV. Such behaviour suggests a spin dependent contribution to δ(T ). The localization radius of the charge carriers, a, has different constant values within the temperature intervals where δ(T ) ~ T 1/2. With further decrease of T , a increases according to the law expected for small lattice polarons Полный текст |