K 81 Krasil'nikov, V. N. Preparation of Thick LaCu1 – xNixO2.5 +delta Films Exhibiting a High-Temperature Metal–Semiconductor Transition / V. N. Krasil'nikov, G. V. Bazuev // Inorganic Materials. - 2002. - Vol. 38, № 10. - P. 1048-1052 : il. - Bibliogr. : p. 1052 (12 ref.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Кл.слова (ненормированные): ОКСИДЫ СЛОЖНЫЕ -- ПЛЕНКИ ТОЛСТЫЕ -- ВЫСОКОТЕМПЕРАТУРНЫЕ СВЕРХПРОВОДНИКИ -- МЕДЬСОДЕРЖАЩИЕ СВЕРХПРОВОДНИКИ Аннотация: The conditions for producing thick LaCu1- xNixO2.5 +delta films on different substrates were optimized. The effects of the heat-treatment conditions, substrate material, and the nature of the liquid organic binder on the composition, structure, and properties of the films were studied. Single-phase coatings obtained on MgO, ZrO2, BaSO4, and Ni substrates 50 to 200 mm in thickness were close in properties to bulk LaCu1-xNixO2.5 +delta and exhibited a metall–semiconductor transition at about 500° Полный текст |