T 44 The Production and Structure of Submicrometer Eu0.75Fe0.25O Films on InSb, Si, and GaAs Substrates / A. S. Borukhovich, A. I. Galyas, O. F. Demidenko, V. Dyakonov, V. A. Ketsko, N. I. Ignat’eva, N. N. Novitskii, A. I. Stognij, H. Szymczak, K. I. Yanushkevich // Inorganic Materials. - 2009. - Vol. 45, № 3. - P. 254-257 : il. - Bibliogr. : p. 256-257 (12 ref.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Кл.слова (ненормированные): ПОЛУПРОВОДНИКОВЫЕ МАТЕРИАЛЫ -- ФЕРРОМАГНЕТИКИ -- ПЛЕНКИ ТОНКИЕ Аннотация: The conditions for fabrication and the crystal structure of the up-to-350-nm-thick Eu0.75Fe0.25O layers formed on InSb, Si, and GaAs substrates are studied. For the first time, 100–200 nm films with morphological surface inhomogeneities not exceeding 10 nm in size are produced by flash evaporation of targets close in composition to Eu0.75Fe0.25O onto InSb(001) substrates. The films exhibit ferromagnetic properties in combination with semiconductor properties at room temperatures Полный текст |