E 58 Enyashin, A. N. Atomic Defects of the Walls and the Electronic Structure of Molybdenum Disulfide Nanotubes / A. N. Enyashin, A. L. Ivanovskii // Semiconductors. - 2007. - Vol. 41, № 1. - P81-86 : il. - Bibliogr. : p. 86 (17 ref.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Кл.слова (ненормированные): ДИСУЛЬФИД МОЛИБДЕНА -- НАНОТРУБКИ Аннотация: The method of the charge-density functional in the tight-binding approximation is used to study the effect of different types of wall atomic defects in the MoS2 nanotubes on their structural and electronic properties. It is shown that the atomic defects in the walls of the MoS2 nanotubes can be responsible for the semiconductor–metal transitions Полный текст |