Вид документа : Статья из журнала Шифр издания : 54/G 96 Автор(ы) : Gusev A. I. Заглавие : of NonstoichiometricEffect of Carbon Vacancies on the Electric Resistivity of Nonstoichiometric VCy Vanadium Carbide Место публикации : JETP Letters. - 2009. - Vol. 90, № 3. - С. 191-196: il. Примечания : Bibliogr. : p. 196 (21 ref.) ISSN: 0021-3640 ББК : 54 Предметные рубрики: ХИМИЧЕСКИЕ НАУКИ Ключевые слова (''Своб.индексиров.''): нестехиометрия--карбид ванадия--электросопротивление Аннотация: The influence of the temperature, concentration, and distribution of structure vacancies of the carbon sub lattice on the electric resistivity ρ of nonstoichiometric VCy vanadium carbide (0.66 ≤ y ≤ 0.875) has been studied in the temperature range of 300–1200 K. The symmetry and structure characteristics of the ordered V6C5 and V8C7 phases formed owing to low temperature annealing on various sections of the homogeneity region of the VCy carbide. The dependence of the residual electric resistivity on the content of the disordered vanadium carbide is explained by the atom–vacancy interaction and the change in the carrier concentration in the homogeneity region of VCy Доп.точки доступа: Гусев Александр Иванович